歐美晶振


XO75-125M000-B50B3|125MHz|3.3V|Fortiming晶振,歐美進(jìn)口晶振,Fortiming晶振,XO75有源晶振,貼片晶振,XO75-125M000-B50B3晶振,石英晶體振蕩器,7050mm晶振,四腳封裝晶振,頻率125MHz,電壓3.3V,頻率穩(wěn)定性50ppm,工作溫度-40~85°C,高穩(wěn)定性晶振,低老化晶振,無鉛環(huán)保晶振,電信交換機(jī)晶振,測(cè)試與測(cè)量設(shè)備晶振,智能家居晶振,數(shù)碼產(chǎn)品晶振.
XO75-125M000-B50B3|125MHz|3.3V|Fortiming晶振特點(diǎn):
-符合RoHS標(biāo)準(zhǔn)(無鉛),行業(yè)標(biāo)準(zhǔn)引腳間距
-極低相位抖動(dòng)與基本或第三泛音晶體設(shè)計(jì)
-三狀態(tài)啟用/禁用標(biāo)準(zhǔn);5V、3.3V、2.5V或1.8V可選
-超小型封裝(7x 5 x1.2 mm)

-符合RoHS標(biāo)準(zhǔn)(無鉛),行業(yè)標(biāo)準(zhǔn)引腳間距
-極低相位抖動(dòng)與基本或第三泛音晶體設(shè)計(jì)
-三狀態(tài)啟用/禁用標(biāo)準(zhǔn);5V、3.3V、2.5V或1.8V可選
-超小型封裝(7x 5 x1.2 mm)


XO75-125M000-B50B3|125MHz|3.3V|Fortiming晶振規(guī)格表
frequency | 125 MHz |
Input Voltage (Vcc)
|
+3.3 VDC ± 10%
|
Input Current
|
60 mA Maximum for 3.3V |
Storage Temperature
|
-55°C to 125°C
|
Overall Frequency Stability
|
100 = ±100 ppm; 50 = ±50 ppm; 25 = ±25 ppm
|
OperatingTemperature Range
|
A = 0°C to 70°C; B = -40°C to 85°C; D = -20°C to 70°C
|
Standard Stability
|
100A = ±100 ppm / 0°C to 70°C
|
Duty Cycle (at 50% Vp-p)
|
1 = tristate 60/40%; 3 = tristate 55/45%; 5 = Tristate 52.5/47.5%
0 = No tristate 60/40%; 2 = No tristate 55/45%; 4 = No tristate 52.5/47.5%
|
Output Load
|
HCMOS: Drive up to 50 pF load; TTL: Drive up to 10 TTL gates
|
Logic "1" / Logic "0" Level
|
0.9Vcc Minimum / 0.1Vcc Maximum
|
Rise/Fall Time (Tr/Tf)
|
10 ns Maximum, depending on frequency and output load
|
Start-up time
|
10 ms Maximum
|
Phase Jitter
|
1 ps Max for fj > 1kHz; 0.3 ps Typical for fj = 12KHz to 20MHz
|
Aging
|
3 ppm First year; 1 ppm/year after first year
|
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XO75-125M000-B50B3|125MHz|3.3V|Fortiming晶振尺寸圖